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Scaling behavior and coarsening transition of annealed ZnO films on Si substrate
Liu, Z.W., Fu, W.J., Liu, M., Gu, J.F., Ma, C.Y., Zhang, Q.Y.
Abstract: Using reactive radio frequency magnetron sputtering, ZnO films were deposited on Si (001) substrate at room temperature and were annealed at different temperatures ranging from 300 to 1000 °C in air. The annealing behavior has been studied by analyzing morphological and structural evolution of ZnO films quantitatively. A coarsening transition is found occurring at a temperature of about 790 °C. For the annealed films above and below the temperature, the diffusion mechanisms of oxygen vacancies and zinc interstitials are assigned to be responsible for the coarsening behaviors, respectively.
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